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| savantic semiconductor product specification silicon npn power transistors BDX65B d escription with to-3 package darlington complement to type bdx64b applications designed for power amplification and switching applications. pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 12 a i cm collector current(peak) 16 a i b base current 0.2 a p t total power dissipation t c =25 117 w t j junction temperature -55~200 t stg storage temperature -55~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.5 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BDX65B c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ; i b =0;l=25mh 100 v v cesat collector-emitter saturation voltage i c =5a ;i b =20ma 2 v v be base-emitter on voltage i c =5a;v ce =3v 3 v i cbo collector cut-off current v cb =100v; i e =0 t c =150 0.4 3 ma i ceo collector cut-off current v ce =50v; i b =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 5 ma v f diode forward voltage i f =3a 1.8 v h fe-1 dc current gain i c =1a ; v ce =3v 1500 h fe-2 dc current gain i c =5a ; v ce =3v 1000 h fe-3 dc current gain i c =10a ; v ce =3v 1500 f t transition frequency i c =5a ; v ce =3v 7 mhz savantic semiconductor product specification 3 silicon npn power transistors BDX65B package outline fig.2 outline dimensions |
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